▶ Product : Monocrystalline Silicon Wafer
▶ Conductivity Type : P-type
▶ Base Area : 150.0mm x 150.0mm±0.5mm
▶ Diameter : 160.0mm±0.5mm
▶ Thickness : 200um±20um
▶ TTV : <=30um
▶ Resistivity : 0.8~3.0 ohm cm, 3.0~6.0 ohm cm
▶ Dopant Species : Boron
▶ Orientation : (100)±1°
▶ Carbon Concentration : <=2.5x1017 at/cm3
▶ Oxygen Concentration : <=1x1018 at/cm3
▶ Dislocation Density : <=3000 /cm2
▶ Life Time : >=10us
▶ Wafer Surface : As cut and cleaned. No grease stains and pin holes
▶ Warping : <=50um
▶ Corner Angle : 90±0.5 degree
▶ Edge Chips : Length<=1.0um, Depth<0.5mm, No more than 2
▶ Edge Cracks : Not Allowed
▶ Saw Marks : Depth<=20um
▶ Pin Holes : No visible pin holes with the naked eye
